 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDD6N20 / FDU6N20 N-Channel MOSFET May 2007 FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8 Features * RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A * Low gate charge ( Typ. 4.7nC ) * Low Crss ( Typ. 6.3pF ) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G S D G D-PAK FDD Series G DS I-PAK FDU Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 200 30 4.5 2.7 18 60 4.5 4.0 4.5 40 0.32 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 3.1 110 Units o C/W (c)2007 Fairchild Semiconductor Corporation FDD6N20 / FDU6N20 Rev. A 1 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDD6N20 FDD6N20 FDU6N20 Device FDD6N20TM FDD6N20TF FDU6N20TU Package D-PAK D-PAK I-PAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 70 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 160V, TC = 125oC VGS = 30V, VDS = 0V VDS = 200V, VGS = 0V 200 0.28 1 10 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 2.3A VDS = 40V, ID = 2.3A (Note 4) 3.0 - 0.6 2.9 5.0 0.8 - V S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 160V, ID = 6A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 170 45 6.3 4.7 1.2 2.2 230 60 9.5 6.1 - pF pF pF nC nC nC - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 6A RG = 25 (Note 4, 5) - 8.3 5.6 15 12.8 26.7 21.2 40 35.5 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4.5A VGS = 0V, ISD = 6A dIF/dt = 100A/s (Note 4) - 120 0.4 4.5 18 1.4 - A A V ns C Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 5.9mH, IAS = 4.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD6N20 / FDU6N20 Rev. A 2 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 Figure 2. Transfer Characteristics 20 10 ID,Drain Current[A] ID,Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 150 C o 1 1 o 25 C -55 C *Notes: 1. VDS = 25V 2. 250s Pulse Test o *Notes: 1. 250s Pulse Test 0.1 0.1 2. TC = 25 C o 1 10 VDS,Drain-Source Voltage[V] 30 0.1 2 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 50 RDS(ON) [], Drain-Source On-Resistance IS, Reverse Drain Current [A] 2.0 1.5 10 150 C 25 C o o 1.0 VGS = 10V VGS = 20V 0.5 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 0.0 0 2 4 6 8 ID, Drain Current [A] 10 12 1 0.4 2. 250s Pulse Test 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Body Diode Forward Voltage [V] 1.8 Figure 5. Capacitance Characteristics 1000 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] VDS = 50V VDS = 100V VDS = 160V 8 Capacitances [pF] 100 Crss 6 4 10 5 0.1 *Note: 1. VGS = 0V 2. f = 1MHz 2 *Note: ID = 6A 1 10 VDS, Drain-Source Voltage [V] 30 0 0 1 2 3 4 Qg, Total Gate Charge [nC] 5 FDD6N20 / FDU6N20 Rev. A 3 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 2.3A BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 50 20s Figure 10. Maximum Drain Current vs. Case Temperature 5 10 ID, Drain Current [A] 100s 4 ID, Drain Current [A] 400 1 Operation in This Area is Limited by R DS(on) 1ms 10ms DC 3 2 0.1 *Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve 5 Thermal Response [ZJC] 0.5 1 0.2 0.1 0.05 PDM t1 t2 o 0.1 0.02 0.01 Single pulse *Notes: 1. ZJC(t) = 3.1 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 0.01 -5 10 10 -4 10 10 10 Rectangular Pulse Duration [sec] -3 -2 -1 10 0 10 1 FDD6N20 / FDU6N20 Rev. A 4 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD6N20 / FDU6N20 Rev. A 5 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD6N20 / FDU6N20 Rev. A 6 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Mechanical Dimensions D-PAK FDD6N20 / FDU6N20 Rev. A 7 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET Mechanical Dimensions I-PAK FDD6N20 / FDU6N20 Rev. A 8 www.fairchildsemi.com FDD6N20 / FDU6N20 N-Channel MOSFET tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor and is not intended to be an exhaustive list of all such trademarks. Green FPSTM e-SeriesTM ACEx(R) Power-SPMTM GOTTM PowerTrench(R) Build it NowTM i-LoTM CorePLUSTM Programmable Active DroopTM IntelliMAXTM CROSSVOLTTM QFET(R) ISOPLANARTM CTLTM QSTM MegaBuckTM Current Transfer LogicTM QT OptoelectronicsTM MICROCOUPLERTM EcoSPARK(R) Quiet SeriesTM MicroPakTM RapidConfigureTM FACT Quiet SeriesTM Motion-SPMTM SMART STARTTM FACT(R) OPTOLOGIC(R) SPM(R) FAST(R) FastvCoreTM OPTOPLANAR(R) STEALTHTM FPSTM SuperFETTM PDP-SPMTM FRFET(R) SuperSOTTM-3 Power220(R) SuperSOTTM-6 Global Power ResourseSM Power247(R) SuperSOTTM-8 Green FPSTM POEWEREDGE(R) owns or is authorized to use SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I28 No Identification Needed Full Production Obsolete Not In Production FDD6N20 / FDU6N20 Rev. A 9 www.fairchildsemi.com |
Price & Availability of FDU6N20
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |